6 results
AlN Etching under ICP Cl2/BCl3/Ar Plasma Mixture: Experimental Characterization and Plasma Kinetic Model
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- Journal:
- MRS Advances / Volume 4 / Issue 27 / 2019
- Published online by Cambridge University Press:
- 31 January 2019, pp. 1579-1587
- Print publication:
- 2019
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Atomic scale study of InP etching by Cl2-Ar ICP plasma discharge
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- Journal:
- The European Physical Journal - Applied Physics / Volume 53 / Issue 3 / March 2011
- Published online by Cambridge University Press:
- 22 February 2011, 33606
- Print publication:
- March 2011
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Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 782 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, A5.78
- Print publication:
- 2003
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2D InP etching simulation under high density plasma of chlorine
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- Journal:
- MRS Online Proceedings Library Archive / Volume 782 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, A5.62
- Print publication:
- 2003
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Simulation of mesa structures for III-V semiconductors under ion beam etching
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- Journal:
- The European Physical Journal - Applied Physics / Volume 6 / Issue 3 / June 1999
- Published online by Cambridge University Press:
- 15 June 1999, pp. 273-280
- Print publication:
- June 1999
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Simulation Study of IBE Process for III-V Compounds in Mesa and Trenches
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- Journal:
- MRS Online Proceedings Library Archive / Volume 490 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 225
- Print publication:
- 1997
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